| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| TPC8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8204 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8202 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| 2SJ200-Y |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| TPC8201 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM6L05FU |
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J133TU-14 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
